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Role of the rf power on the structure of defects in a-Si:H films produced by PECVD

Authors: P.M. Gordo, V.S. Subrahmanyam, M. Duarte Naia, C. Lopes Gil, A.P. de Lima, G. Lavareda, C. Nunes de Carvalho, A. Amaral

Ref.: Mater. Sci. Forum 363-365 (2001)