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Novel muonium state in CdS

Authors: J. M. Gil, H. V. Alberto, R. C. Vil√£o, J. Piroto Duarte, P. J. Mendes, L. P. Ferreira, N. Ayres de Campos, A. Weidinger, J. Krauser, Ch. Niedermayer, S. F. J. Cox

Ref.: Phys. Rev. Lett 83, 5294-5297 (1999)

Abstract: A new type of muonium defect center has been observed in undoped CdS below 20 K. The hyperfine interaction amounts only to approximately 10(-4) of the vacuum value, and is shown to have axial symmetry along the Cd-S bond direction. Results suggest that the muon is close to the sulfur antibonding site and the paramagnetic electron density is distributed over a large volume. In contrast to the behavior in other semiconductors, muonium forms a shallow center in CdS. By implication, analog isolated hydrogen impurity atoms act as electrically active shallow-level defect centers in CdS.

DOI: 10.1103/PhysRevLett.83.5294