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Shallow donor muonium states in II-VI semiconductor compounds

Authors: J. M. Gil, H. V. Alberto, R. C. Vil√£o, J. Piroto Duarte, N. Ayres de Campos, A. Weidinger, J. Krauser, E. A. Davis, S. P. Cottrell, S. F. J. Cox

Ref.: Phys. Rev. B 64, 075205 (2001)

Abstract: Experimental data on shallow donor muonium states in the II-VI semiconductor compounds CdS, CdSe, CdTe, and ZnO are presented. These are characterized by very weak hyperfine interactions amounting to approximately 10(-4) of the free-atom value, and by donor levels with binding energies comparable to those calculated on the hydrogenic model of the shallow centers. The data are discussed in terms of a model generalizing the knowledge of muonium and hydrogen states in tetrahedrally bonded semiconductors. Within this model the shallow muonium state is attributed to muonium bound to the anion of the II-VI compound and located at the antibonding site or close to it in the bond direction.

DOI: 10.1103/PhysRevB.64.075205