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Electrical properties of sol-gel derived MPB 0.37BiScO3-0.63PbTiO3 thin films on Iridium oxide electrode

Authors: Jingzhong Xiao, Aiying Wu, Paula M. Vilarinho, A. R. Ramos and E. Alves

Ref.: J. Mater. Chem. 19, 5572-5579 (2009)

Abstract: The characterization of sol–gel derived morphotropic phase boundary (MPB) 0.37BiScO3–0.63PbTiO3 (BSPT) thin films, deposited on IrO2/TiO2/SiO2/Si and Pt/TiO2/SiO2/Si substrates, was performed to identify the influence of the IrO2electrodes on the film`s microstructure and electrical properties. Though the ferroelectric behaviour of both films is similar, with remanent polarization values of 26 µC cm−2 and 23 µC cm−2, respectively, for IrO2 and Pt bottom electroded films, the leakage current density (JL) at room temperature markedly decreases from > 10−6 A cm−2 for BSPT on Pt to the order of ≤ 10−8 A cm−2 for BSPT on IrO2, under the maximum voltage of 4 V (∼80 kV cm−1). The formation of an interface layer between the film and the electrode, as observed by Rutherford Backscattering Spectroscopy, is proposed to have a space charge sink effect and, as a consequence, to account for the improvement of the leakage current behaviour of the IrO2 electroded films.

DOI: 10.1039/B900970A