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Sol-gel derived morphotropic phase boundary 0.37BiScO3-0.63PbTiO3 thin films

Authors: Jingzhong Xiao, Aiying Wu, Paula M. Vilarinho

Ref.: Appl. Phys. Lett. 92, 032902 (2008)

Abstract: Dielectric/ferroelectric properties of morphotropic phase boundary 0.37 Bi Sc O 3–0.63 Pb Ti O 3 thin films with a Pb Ti O 3 seed layer deposited on platinized silicon substrates by sol-gel are examined. Room temperature dielectric constant of ≫1600 and dielectric loss of 0.02 are achieved (100 Hz ) . A well-defined hysteresis loop was observed with a Pr of ∼23 μ C / cm 2 . In particular, the remarkable low Ec of ∼33 kV / cm of these films adds value to the potential application of Bi Sc O 3– Pb Ti O 3 films in high temperature ferroelectric memories. The influence of Pb Ti O 3 seed layer on the electric properties and the relation with the phase formation process, crystallinity, and microstructure of the films is discussed. Sol-gel derived morphotropic phase boundary 0.37BiScO3–0.63PbTiO3 thin films (PDF Download Available). Available from: https://www.researchgate.net/publication/224406345_Sol-gel_derived_morphotropic_phase_boundary_037BiScO3-063PbTiO3_thin_films [accessed Dec 22, 2015].

DOI: 10.1063/1.2834366