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Shallow donor versus deep acceptor state in II-VI semiconductor compounds

Authors: A. Weidinger, J. M. Gil, H. V. Alberto, R. C. Vil√£o, J. Piroto Duarte, N. Ayres de Campos, S. F. J. Cox

Ref.: Physica B: Condens. Matter 326, 124-127 (2003)

Abstract: Information on the properties of the possible muonium states in II-VI semiconductor compounds is obtained in this study. In these materials, muonium may either form a shallow donor state, which is characterized by a small hyperfine interaction and a level-energy close to the conduction band, or an acceptor state, which corresponds to muonium at an interstitial site with a tightly bound electron and a hyperfine interaction close to that of free muonium. We show here that in US, Use and ZnO muonium preferentially forms a donor state whereas the acceptor state is preferred in ZnS and Znse. In CdTe both states are observed, indicating that the level energies are similar. (C) 2002 Elsevier Science B.V. All rights reserved.

DOI: 10.1016/S0921-4526(02)01594-6