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Muon diffusion and trapping in chalcopyrite semiconductors

Authors: R. C. Vil√£o, J. M. Gil, H. V. Alberto, J. Piroto Duarte, N. Ayres de Campos, A. Weidinger, M. V. Yakushev, S. F. J. Cox

Ref.: Physica B: Condens. Matter 326, 181-184 (2003)

Abstract: The diffusion parameters of diamagnetic muons in chalcopyrites CuInSe(2), CuInS(2), CuInTe(2), CuGaTe(2) and (Ago(0.25)Cuo(0.75))InSe(2) were obtained by muSR methods. The variations among the different compositions were found to validate the anion-antibonding localization model. The application of a two-state model to the zero-field data revealed muon trapping by defects. The dipolar width at the trap and the number of jumps before trapping were determined. The Cu vacancy is identified as the trapping center in CuInSe2 and the energy depth of the trap has been determined. (C) 2002 Elsevier Science B.V. All rights reserved.

DOI: 10.1016/S0921-4526(02)01598-3