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Structural, Electrical, and Impedance Properties of Nd0.6Sr0.3Ba0.1MnO3 Perovskite with Potential for Advanced Electronic Devices
Authors: Aydi, Z.; Dhahri, A.; Jeddi, M.; Khirouni, K.; Dhahri, E.
Ref.: J. Inorg. Organomet. Polym. Mater. pre-print (2025)
Abstract: The Nd0.6Sr0.3Ba0.1MnO3 compound was successfully synthesized using the self-combustion method and extensively characterized through structural, morphological, and electrical analyses. This study combines structural, morphological, Direct Courant/Alternative Courant conductivity, and impedance spectroscopy to systematically correlate structural modifications with electronic and dielectric properties, providing a deeper understanding of conduction and polarization mechanisms in doped perovskite manganites. X-ray diffraction refinement confirmed that the material crystallizes in an orthorhombic phase (Pnma space group), with noticeable lattice expansion due to the partial substitution of Sr-2(+) by Ba-2(+). The increase in Mn-O bond length and the modification of the Mn-O-Mn bond angle significantly influence the electronic bandwidth (W/W0 = 0.1381), impacting charge transport and electronic properties. Scanning electron microscopy revealed a uniform grain distribution, with an average grain size of 49 nm. The study of direct current and alternating current conductivity demonstrated a strong temperature dependence, where charge transport transitions from an Overlapping Large Polaron Tunneling mechanism at low temperatures (300-500 K) to a Correlated Barrier Hopping model beyond 500 K. The activation energy (WM= 0.772 eV) confirms the role of structural modifications and Mn-3(+)/Mn-4(+) interactions in defining the electronic transport properties. Impedance spectroscopy revealed distinct contributions from grain interior and grain boundaries, confirming their individual roles in charge transport. Ba-doped Nd0.6Sr0.4MnO3 exhibits a decreasing permittivity at high frequencies and Maxwell-Wagner polarization. Based on its electrical behavior and thermal stability, the Ba-doped Nd-0.Sr-6(0).4MnO(3) system shows promise for advanced applications such as resistive switching devices and electronic systems, pending further dedicated studies on magnetic or sensing performance.
