2026 | 2025 | 2024 | 2023 | 2022 | 2021 | 2020 | 2019 | 2018 | 2017 | 2016 | 2015 | 2014 | 2013 | 2012 | 2011 | 2010 | 2009 | 2008
First-Principles Study of the Formation and Stability of the Interstitial and Substitutional Hydrogen Impurity in Magnesium Oxide
Authors: Marinopoulos, A.G.
Ref.: Condens. Matter 11(1), 2 (2026)
Abstract: Hydrogen is frequently incorporated in alkaline-earth oxides during crystal growth or post-deposition annealing. For MgO, several studies in the past showed that interstitial monatomic hydrogen can also favourably bind with oxygen vacancies to form stable substitutional defect complexes (substitutional hydrogen or U-defect centers). The present study reports first-principles density-functional calculations of the formation energies of both interstitial and substitutional forms of the hydrogen impurity in MgO. Determination of the site-resolved densities of electronic states allowed for a detailed identification of the nature of the impurity-induced levels, both in the valence-energy region and inside the band gap of the host. The stability and diffusion mechanisms of both hydrogen defects was also studied with the aid of nudged elastic-band (NEB) calculations. Interstitial hydrogen was found to be an amphoteric defect with the lower formation energy for any realistic environment conditions (temperature and oxygen partial pressure). The NEB calculations showed that it is a fast-diffusing species when it is thermodynamically stable as a positively-charged state (bare proton). In contrast, the hydrogen-vacancy complex is a shallow donor, extremely stable against dissociation and virtually immobile as an isolated defect. Its formation is found to be favoured for a range of mid-gap Fermi-level positions where positively-charged interstitial hydrogen and neutral oxygen vacancies (F centers) are both thermodynamically stable low-energy defects. The present findings are consistent with the established consensus on the electrical activity of hydrogen in MgO as well as with experimental observations reporting the remarkable thermal stability of substitutional hydrogen defects and their ability to act as electron traps.
