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Electronic nature of the surface defect layer in Cu(In,Ga)Se2: Sensitivity analysis of carrier mobility and defect states via Muon-SCAPS study
Authors: Violas, A.F.; Castelo-Branco, J.; Alberto, H.V.; Vilao, R.C.; Gil, J.M.; Oliveira, A.; Teixeira, J.P.; Fernandes, P.A.; Salomé, P.M.P.
Ref.: Curr. Appl Phys. 88, 64-71 (2026)
Abstract: Cu(In,Ga)Se-2 (CIGS) solar cells achieve high light-to-power conversion efficiency but remain constrained by recombination losses associated with a surface defect layer (SDL). Muon spin spectroscopy (mu SR) measurements identified a similar to 50 nm near-interface region in CIGS exhibiting pronounced defect-induced lattice strain, markedly reduced after CdS buffer layer deposition. In this work, mu SR findings are corroborated by SCAPS simulations that evaluate the electronic impact of the SDL by varying carrier mobility, defect density, and energy levels. Deep acceptor-type defects, particularly those with energies > E-v + 0.4 eV and concentrations of 10(15)-10(16) cm(-3), significantly lower device efficiency, mainly through short-circuit current density reduction. The CdS-induced passivation observed by mu SR is consistent with a decrease in both defect depth and concentration. These combined results connect mu SR measurements, surface defect properties, and device behavior, highlighting SDL passivation as a key pathway toward higher-efficiency CIGS photovoltaics.
