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Delayed electron capture and Mu- formation in ZnSe

Authors: R.C. Vil√£o, J.M. Gil, A. Weidinger, H.V. Alberto, J. Piroto Duarte, B.F.O. Costa, N. Ayres de Campos, R. L. Lichti, K. H. Chow, S. P. Cottrell, and S. F. J. Cox

Ref.: Physica B 404, 888-891 (2009)

Abstract: We have investigated a single crystal of the wide bandgap II-VI semiconductor ZnSe. The sample was highly resistive due to heavy compensation of this n-type semiconductor. In low transverse fields, clear signs of conversion from a paramagnetic to a diamagnetic fraction are observed, at about 60 K. The data are interpreted as delayed electron capture by paramagnetic muonium, forming the negatively charged state Mu(-). The implications with respect to the electrical activity of muonium, and by analogy hydrogen, in this semiconductor are analyzed. (C) 2008 Elsevier B.V. All rights reserved.

DOI: 10.1016/j.physb.2008.11.144