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Oxide muonics: a new compendium
Authors: S.F.J. Cox, J.S. Lord, S.P. Cottrell, J.M. Gil, H.V. Alberto, J. Piroto Duarte, R.C. Vilão, D.J. Keeble, E.A. Davis, A. Keren, R. Scheuermann, A. Stoykov, M. Charlton, D.P. van derWerf, J. Gavartin
Ref.: Physica B: Condensed Matter 374/375, 379-382 (2006)
Abstract: A new survey of muonium states brings the total of binary non-magnetic oxides studied to 30, with normal muonium-the interstitially trapped atomic state-found in 15 of these. The number of shallow-donor states of the type known in ZnO now also totals 15, but there are hints of several others. Tantalizingly, the shallow-donor and deep-atomic states are found to coexist in several of the candidate high-permittivity dielectrics. Highly anisotropic states, resembling anomalous muonium in semiconductors and including examples of muonium trapped at oxygen vacancies, complete a spectrum of hyperfine parameters covering five powers of tell. Effective ionization temperatures range from 10 K for shallow to over 1000 K for deep states, with corresponding activation energies between several meV and several eV. The oxide band gap emerges as a parameter controlling the systematics of the deep-to-shallow transition for muonium and, by inference, monatomic hydrogen. (c) 2005 Elsevier B.V. All rights reserved.
